Growth of nanocrystalline diamond on gallium oxide using various interlayers

0575292 - FZÚ 2024 RIV SK eng C - Konferenční příspěvek (zahraniční konf.)
Ťapajna, M. - Keshtkar, J. - Szabó, Ondrej - Shagieva, Ekaterina - Hušeková, K. - Dobročka, E. - Fedor, J. - Dérek, J. - Kromka, Alexander - Gucmann, F.
Growth of nanocrystalline diamond on gallium oxide using various interlayers.
Proceedings of ADEPT - ADEPT 2023. Žilina: University of Žilina, 2023 - (Jandura, D.; Lettrichová, I.; Kováč, jr., J.), s. 28-31. ISBN 978-80-554-1977-0.
[International Conference on Advances in Electronic and Photonic Technologies /11./ - ADEPT 2023. Podbanské (SK), 12.06.2023-15.06.2023]
Institucionální podpora: RVO:68378271
Klíčová slova: Ga₂O₃ * diamond * hetero-integration * CVD * MOCVD * pn heterojunction
Obor OECD: Materials engineering

Hetero-integration of Ga2O3 and diamond is an intriguing approach for processing of pn diodes with enhanced thermal properties. In this work, we investigated the growth of nanocrystalline diamond films using microwave plasma CVD on monoclinic beta Ga2O3, which was grown by liquid-injection metal-organic CVD on sapphire employing various interlayers. It was found that the use of an ultrathin SiO2 interlayer (~20 nm) yields highly promising results although optimization of the conditions for AlN deposition is necessary.
Trvalý link: https://hdl.handle.net/11104/0345070