Development of Nb-GaAs based superconductor-semiconductor hybrid platform by combining in situ dc magnetron sputtering and molecular beam epitaxy

0575229 - FZÚ 2024 RIV US eng J - Článek v odborném periodiku
Todt, C. - Telkamp, S. - Křížek, Filip - Reichl, C. - Gabureac, M. - Schott, R. - Cheah, E. - Zeng, P. - Weber, T. - Müller, A. - Vockenhuber, C. - Panah, M.B. - Wegscheider, W.
Development of Nb-GaAs based superconductor-semiconductor hybrid platform by combining in situ dc magnetron sputtering and molecular beam epitaxy.
Physical Review Materials. Roč. 7, č. 7 (2023), č. článku 076201. ISSN 2475-9953. E-ISSN 2475-9953
Institucionální podpora: RVO:68378271
Klíčová slova: Nb sputtering * ultra high vacuum sputtering * Nb-GaAs material system * superconductor semiconductor hybrids
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 3.4, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1103/PhysRevMaterials.7.076201

We present Nb thin films deposited in situ on GaAs by combining molecular beam epitaxy and magnetron sputtering within an ultrahigh vacuum cluster. Nb films deposited at varying power, and a reference film from a commercial system, are compared. The results show clear variation between the in situ and ex situ deposition which we relate to differences in magnetron sputtering conditions and chamber geometry. The Nb films have critical temperatures of around 9 K and critical perpendicular magnetic fields of up to Bc2 = 1.4 T at 4.2 K. From STEM images of the GaAs-Nb interface we find the formation of an amorphous interlayer between the GaAs and the Nb for both the ex situ and in situ deposited material.
Trvalý link: https://hdl.handle.net/11104/0349118