Gate-tunable renormalization of spin-correlated flat-band states and bandgap in a 2D magnetic insulator

0574995 - FZÚ 2024 RIV US eng J - Článek v odborném periodiku
Lyu, P. - Sodequist, J. - Sheng, X. - Qiu, Z. - Tadich, A. - Li, Q. - Edmonds, M. T. - Zhao, M. - López, Roso Redondo Jesús R. - Švec, M. - Song, P. - Olsen, T. - Lu, J.
Gate-tunable renormalization of spin-correlated flat-band states and bandgap in a 2D magnetic insulator.
ACS Nano. Roč. 17, č. 16 (2023), s. 15441-15448. ISSN 1936-0851. E-ISSN 1936-086X
Institucionální podpora: RVO:68378271
Klíčová slova: gate-tunable device * 2D magnetic insulator * flat band * band renormalization * stm
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 17.1, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1021/acsnano.3c01038

Emergent quantum phenomena in two-dimensional van der Waals (vdW) magnets are largely governed by the interplay between exchange and Coulomb interactions. The ability to precisely tune the Coulomb interaction enables the control of spin-correlated flat-band states, band gap, and unconventional magnetism in such strongly correlated materials. Here, we demonstrate a gate-tunable renormalization of spin-correlated flat-band states and bandgap in magnetic chromium tribromide (CrBr3) monolayers grown on graphene. Our gate-dependent scanning tunneling spectroscopy (STS) studies reveal that the interflat-band spacing and bandgap of CrBr3 can be continuously tuned by 120 and 240 meV, respectively, via electrostatic injection of carriers into the hybrid CrBr3/graphene system. We attribute it to the self-screening of CrBr3 arising from the gate-induced carriers injected into CrBr3, which dominates over the weakened remote screening of the graphene substrate.
Trvalý link: https://hdl.handle.net/11104/0347801