Synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation

0574800 - ÚPT 2024 RIV US eng J - Článek v odborném periodiku
Čech, V. - Bránecký, Martin
Synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation.
Plasma Processes and Polymers. Roč. 20, č. 7 (2023), č. článku 2300019. ISSN 1612-8850. E-ISSN 1612-8869
Institucionální podpora: RVO:68081731
Klíčová slova: degree of dissociation * nonthermal plasma * organosilicon precursors * plasma-enhanced chemical vapor deposition (PECVD) * sticking coefficient * thin films
Obor OECD: Polymer science
Impakt faktor: 3.5, rok: 2022
Způsob publikování: Omezený přístup
https://onlinelibrary.wiley.com/doi/10.1002/ppap.202300019

Lower flow rates of precursor molecules are favorable for the synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation and sufficiently high deposition rate. These deposition conditions can be used for both continuous wave (CW) and pulsed plasmas and result in higher consumption of precursor molecules, which is beneficial for industrial applications due to cost reduction. A wider range of power can be used to control the chemical and physical properties of thin-film materials based on power-dependent plasma chemistry. Hydrogenated amorphous silicon carbide films deposited in CW and pulsed plasma are used as an example. The different kinetics of film growth and the role of self-bias voltage in both types of plasma are discussed.
Trvalý link: https://hdl.handle.net/11104/0344768