Defect pairing in Fe-doped SnS van der Waals crystals: a photoemission and scanning tunneling microscopy study

0574630 - FZÚ 2024 RIV GB eng J - Článek v odborném periodiku
Yesilpinar, Damla - Vondráček, Martin - Čermák, P. - Mönig, H. - Kopeček, Jaromír - Caha, O. - Carva, K. - Drašar, Č. - Honolka, Jan
Defect pairing in Fe-doped SnS van der Waals crystals: a photoemission and scanning tunneling microscopy study.
Nanoscale. Roč. 15, č. 31 (2023), s. 13110-13119. ISSN 2040-3364. E-ISSN 2040-3372
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR(CZ) GA22-04408S; GA ČR GA19-13659S
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Výzkumná infrastruktura: e-INFRA CZ II - 90254; CzechNanoLab - 90110; CzechNanoLab II - 90251
Institucionální podpora: RVO:68378271
Klíčová slova: SnS * STM * defects * magnetism * iron
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 6.7, rok: 2022
Způsob publikování: Open access

We investigate the effect of low concentrations of iron on the physical properties of SnS van der Waals crystals grown from the melt. By means of scanning tunneling microscopy (STM) and photoemission spectroscopy we study Fe-induced defects and observe an electron doping effect in the band structure of the native p-type SnS semiconductor. Atomically resolved and bias dependent STM data of characteristic defects are compared to ab initio density functional theory simulations of vacancy (VS and VSn), Fe substitutional (FeSn), and Fe interstitial (Feint) defects.
Trvalý link: https://hdl.handle.net/11104/0347702