Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation

0574625 - FZÚ 2024 RIV NL eng J - Článek v odborném periodiku
Latoňová, Věra - Allport, P.P. - Bach, E. - Federičová, Pavla - Kroll, Jiří - Kvasnička, Jiří - Mikeštíková, Marcela … celkem 28 autorů
Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation.
Nuclear Instruments & Methods in Physics Research Section A. Roč. 1050, May (2023), č. článku 168119. ISSN 0168-9002. E-ISSN 1872-9576
Grant CEP: GA MŠMT(CZ) LTT17018; GA MŠMT(CZ) LM2018104
Institucionální podpora: RVO:68378271
Klíčová slova: HL-LHC * ATLAS ITk * silicon micro-strip sensor * polysilicon bias resistor * Testchip
Obor OECD: Particles and field physics
Impakt faktor: 1.4, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.nima.2023.168119

The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K.
Trvalý link: https://hdl.handle.net/11104/0349073