Pulsed laser annealed rare earth doped TiO.sub.2./sub. thin films for luminescence and sensing applications

0573665 - FZÚ 2024 RIV NL eng J - Článek v odborném periodiku
Kiisk, V. - Novotný, Michal - Kodu, M. - Pikker, S. - Avarmaa, T. - Remsa, Jan - Lančok, Ján - Vrňata, M. - Jaaniso, R.
Pulsed laser annealed rare earth doped TiO₂ thin films for luminescence and sensing applications.
Applied Surface Science. Roč. 637, Nov (2023), č. článku 157884. ISSN 0169-4332. E-ISSN 1873-5584
Grant CEP: GA MŠMT(CZ) EF16_019/0000760
Grant ostatní: AV ČR(CZ) EstAv-21-08; OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Program: Bilaterální spolupráce
Institucionální podpora: RVO:68378271
Klíčová slova: pulsed laser annealing * luminescent material * metal-oxide * sensing applications * TiO₂ thin film * rare earth ions
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 6.7, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.apsusc.2023.157884

Many research activities target functional luminescent materials based on metal oxides activated with trivalent rare earth ions. Specific applications necessitate optimization of material preparation, annealing and excitation-detection techniques. Hereby we utilized pulsed laser deposition to obtain thin (150 nm) TiO2 films containing 1 at% of samarium (Sm) or neodymium (Nd) impurity ions. The effect of pulsed laser annealing (ArF excimer laser, wavelength 193 nm, pulse duration 20 ns) on their structural and luminescent properties was investigated. It was found that, compared to conventional thermal annealing at 700 ◦C, proper laser annealing (fluence 50 mJ/cm2, 5–15 shots) induced much better crystallization (nearly phase-pure anatase) along with respective improvement of host-sensitized trivalent rare earth fluorescence.
Trvalý link: https://hdl.handle.net/11104/0344157