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Picosecond pulsed laser deposition of MoS.sub.2./sub. thin films
- 1.0573259 - FZÚ 2024 RIV CZ eng J - Článek v odborném periodiku
Quiñones-Galvan, J.G. - Mirza, M. Inam - Hrabovský, Jan - Campos-Gonzalez, E. - de Moure-Flores, F. - Santos-Cruz, J. - Santana-Aranda, M.A. - Bulgakov, Alexander - Bulgakova, Nadezhda M.
Picosecond pulsed laser deposition of MoS2 thin films.
MM Science Journal. Roč. 2023, June (2023), s. 6421-6425. ISSN 1803-1269
Grant CEP: GA MŠMT EF15_003/0000445
Grant ostatní: OP VVV - BIATRI(XE) CZ.02.1.01/0.0/0.0/15_003/0000445
Institucionální podpora: RVO:68378271
Klíčová slova: 2D materials * picosecond laser ablation * thin films * MoS2 * PLD * time-of-flight distributions
Obor OECD: Optics (including laser optics and quantum optics)
Impakt faktor: 0.7, rok: 2022
Způsob publikování: Open access
MoS2 thin films were grown by the pulsed laser deposition technique using a picosecond laser at a wavelength of 1030 nm. The plasma ion mean kinetic energy and density were estimated from the time-of-flight distributions measured using a Langmuir planar probe. It has been found that the mean kinetic energy decreases with increasing the laser pulse energy. This unusual effect is explained by the difference in the volatility of the vaporized species. Samples were structurally characterized by Raman spectroscopy and grazing angle X-ray diffraction. It was found that thin films of amorphous matrices containing MoS2 nanocrystallites were grown. Optical characterization carried out by UV-vis spectroscopy yielded transmittance values above 90% in the visible spectral range and an indirect electronic transition at 1.4 eV.
Trvalý link: https://hdl.handle.net/11104/0343729
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