Effect of PEDOT:PSS Layer Deposition on Electrical and Photoelectrical Properties of n(+)-ZnO/n-Si Heterostructure

0571729 - ÚFE 2024 RIV DE eng J - Článek v odborném periodiku
Gomeniuk, Y.V. - Gomeniuk, Y. Y. - Kondratenko, S. V. - Rudenko, T. E. - Vasin, Andrii - Rusavsky, A.V. - Slobodian, O. M. - Tyagulskyy, I.P. - Kostylyov, V. P. - Vlasiuk, V. M. - Tiagulskyi, Stanislav - Yatskiv, Roman - Lysenko, V.S. - Nazarov, A.N.
Effect of PEDOT:PSS Layer Deposition on Electrical and Photoelectrical Properties of n(+)-ZnO/n-Si Heterostructure.
Journal of Electronic Materials. Roč. 52, č. 5 (2023), s. 3112-3120. ISSN 0361-5235. E-ISSN 1543-186X
Institucionální podpora: RVO:67985882
Klíčová slova: ZnO thin films * solar cells * organic-inorganic heterojunctions * impedance spectroscopy * interface traps
Obor OECD: Materials engineering
Impakt faktor: 2.1, rok: 2022
Způsob publikování: Open access

The results of electrical and photoelectrical characterization of the interface and bulk properties of n(+)-ZnO/n-Si and poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/n(+)-ZnO/n-Si heterostructures are presented. It was found that the PEDOT:PSS layer deposited on the surface of zinc oxide increases the potential barrier at the ZnO/Si interface, leading to higher band bending in the silicon, which is important for solar cell applications. The recombination rate at the interface decreases because of the creation of an inversion layer in the silicon under operational conditions. The increase of the potential barrier in PEDOT:PSS/n(+)-ZnO/n-Si heterostructures results in the increase of the open-circuit voltage by 54-180%. The external quantum efficiency in PEDOT:PSS/n(+)-ZnO/n-Si heterostructures increases by 100% at 450 nm.
Trvalý link: https://hdl.handle.net/11104/0345174