Two-step deposition of TiN capping electrodes to prevent degradation of ferroelectric properties in an in-situ crystallized TiN/Hf.sub.0.5./sub.Zr.sub.0.5./sub.O.sub.2./sub./TiN device

0571425 - FZÚ 2024 RIV GB eng J - Článek v odborném periodiku
Kim, H. - Kashir, Alireza - Jang, H. - Oh, S. - Yadav, M. - Lee, S. - Hwang, H.
Two-step deposition of TiN capping electrodes to prevent degradation of ferroelectric properties in an in-situ crystallized TiN/Hf_0.5Zr_0.5O₂/TiN device.
Nano Express. Roč. 3, č. 1 (2022), č. článku 015004. E-ISSN 2632-959X
Institucionální podpora: RVO:68378271
Klíčová slova: capping layer effect * in situ crystallization * polarization value * deposition temperature * wake-up effect
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 3, rok: 2022
Způsob publikování: Open access

Hf0.5 Zr 0.5 O 2 (HZO) is an appropriate material for the back-end-of-line (BEOL) process in fabricating ferroelectric TiN/HZO/TiN devices because of its excellent conformality on 3D nanostructures and a suitable crystallization temperature (… 350 °C–400 °C). However, in the semiconductor industry, the deposition temperature of TiN is usually higher than 400 °C. Therefore, it is necessary to study the ferroelectric properties of TiN/HZO/TiN devices when the deposition temperature of the TiN top electrode is higher than the HZO film crystallization temperature. In this study, 10-nm-thick TiN top electrodes were deposited at various temperatures on the HZO thin film to investigate the impact of the TiN deposition temperature on the structural features and ferroelectric properties of TiN/HZO/TiN capacitors. Only the sample capped with a TiN top electrode deposited at 400 °C showed ferroelectric properties without subsequent annealing (in situ crystallization).
Trvalý link: https://hdl.handle.net/11104/0342651