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Thermally induced mechanical strain of graphene on copper and other substrates
- 1.0571143 - ÚFCH JH 2024 RIV GB eng J - Článek v odborném periodiku
Seremetis, L. - Arvanitidis, J. - Christofilos, D. - Meletov, K. P. - Frank, Otakar - Kalbáč, Martin - Parthenios, J. - Papagelis, K.
Thermally induced mechanical strain of graphene on copper and other substrates.
Journal of Physics and Chemistry of Solids. Roč. 179, AUG 2023 (2023), č. článku 111371. ISSN 0022-3697. E-ISSN 1879-2553
Grant CEP: GA ČR(CZ) GX20-08633X
Institucionální podpora: RVO:61388955
Klíčová slova: 2-dimensional materials * Graphene * Thermal properties * Phonons
Obor OECD: Physical chemistry
Impakt faktor: 4.3, rok: 2023
Způsob publikování: Omezený přístup
Raman spectroscopy is employed to investigate the temperature dependence of the phonon frequencies of the G and 2D modes of monolayer graphene grown on copper foil by chemical vapor deposition. Both the G and 2D modes exhibit significant red shift as temperature increases, and the extracted values of the temperature coefficients of the G and 2D modes are about −0.07 cm−1K−1 and −0.15 cm−1K−1, respectively. In addition, we extracted the intrinsic Raman shift of the G mode by determining the thermally induced mechanical strain that is transmitted from the copper substrate to graphene. The extracted intrinsic G mode frequency shift is in very good agreement with earlier reported first principles calculations. Finally, we have calculated the temperature dependence of the substrate-induced strain on graphene when it is deposited or grown to various technologically important substrates, showing that strains as high as 1.1% can be imparted to graphene within a temperature range of 500 K.
Trvalý link: https://hdl.handle.net/11104/0342435
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