Tiling the silicon for added functionality: PLD growth of highly crystalline STO and PZT on graphene oxide-buffered silicon surface

0570943 - FZÚ 2024 RIV US eng J - Článek v odborném periodiku
Jovanović, Z. - Trstenjak, U. - Ho, H.C. - Butsyk, Olena - Chen, B. - Tchernychova, E. - Borodavka, Fedir - Koster, G. - Hlinka, Jiří - Spreitzer, M.
Tiling the silicon for added functionality: PLD growth of highly crystalline STO and PZT on graphene oxide-buffered silicon surface.
ACS Applied Materials and Interfaces. Roč. 15, č. 4 (2023), s. 6058-6068. ISSN 1944-8244. E-ISSN 1944-8252
Grant CEP: GA ČR(CZ) GF21-20110K
Institucionální podpora: RVO:68378271
Klíčová slova: PLD deposition * rGO buffer layer * epitaxy * STO pseudo-substrate * added functionality * PZT
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 9.5, rok: 2022
Způsob publikování: Open access

Besides acting as a seed layer for van der Waals epitaxy, the 2D materials have enabled wetting transparency in which the potential field of the substrate, is still capable of imposing epitaxial overgrowth. Preservation of the quality of 2D materials during and after their transfer to a substrate of interest is crucial. We show that the traditional epitaxy and wet chemistry a hybrid approach can offers a unique perspective for the integration of functional oxides with a silicon platform. It is based on SrO-assisted deoxidation and controllable coverage of silicon surface with a layer(s) of spin-coated graphene oxide, thus simultaneously allowing both direct and van der Waals epitaxy of SrTiO3 (STO). We were able to grow a high-quality STO pseudosubstrate suitable for further overgrowth of functional oxides, such as PbZr1−xTixO3 (PZT). This approach may provide new routes for direct and “remote” epitaxy or layer-transfer techniques of dissimilar material systems.
Trvalý link: https://hdl.handle.net/11104/0342281