Light emission dynamics of silicon vacancy centers in a polycrystalline diamond thin film

0569728 - FZÚ 2024 RIV GB eng J - Článek v odborném periodiku
Trojánek, F. - Hamráček, K. - Hanák, M. - Varga, Marián - Kromka, Alexander - Babčenko, Oleg - Ondič, Lukáš - Malý, P.
Light emission dynamics of silicon vacancy centers in a polycrystalline diamond thin film.
Nanoscale. Roč. 15, č. 6 (2023), s. 2734-2738. ISSN 2040-3364. E-ISSN 2040-3372
Grant CEP: GA ČR GA19-14523S
Grant ostatní: AV ČR(CZ) LQ100102001
Program: Prémie Lumina quaeruntur
Institucionální podpora: RVO:68378271
Klíčová slova: polycrystalline diamond * silicon vacancy centers * light emission dynamics * pump and probe technique
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 6.7, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1039/d2nr05470a

Diamond thin films can be, at a relatively low-cost, prepared with a high-density of light-emitting negatively charged silicon vacancy (SiV) centers, which opens up the possibility of their application in photonics or sensing. The films are composed of diamond grains with both the SiV centers and sp2-carbon phase, the ratio of these two components being dependent on the preparation conditions. The grain surface and the sp2-related defects might act as traps for the carriers excited within the SiV centers, consequently decreasing their internal photoluminescence (PL) quantum efficiency. Here, we show that in a 300 nm thick polycrystalline diamond film on a quartz substrate, the SiV centers in the diamond grains possess similar temperature-dependent (13-300 K) PL decay dynamics as the SiV centers in monocrystalline diamond, which suggests that most of the SiV centers are not directly interconnected with the defects of the diamond thin films.
Trvalý link: https://hdl.handle.net/11104/0341967