Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters

0569330 - FZÚ 2024 RIV NL eng J - Článek v odborném periodiku
Hospodková, Alice - Hájek, František - Hubáček, Tomáš - Gedeonová, Zuzana - Hubík, Pavel - Mareš, Jiří J. - Pangrác, Jiří - Dominec, Filip - Kuldová, Karla - Hulicius, Eduard
Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters.
Journal of Crystal Growth. Roč. 605, March (2023), č. článku 127061. ISSN 0022-0248. E-ISSN 1873-5002
Grant CEP: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA ČR(CZ) GF22-28001K
Institucionální podpora: RVO:68378271
Klíčová slova: HEMT * GAN * metalorganic vapor phase epitaxy
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 1.8, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.jcrysgro.2022.127061

Although a lot of attention was devoted to different aspects of GaN HEMT structure such as buffer layer architecture, AlGaN barrier, surface passivation and dielectric choice, not much attention was paid to optimize the technology of GaN channel. We show in this work that by optimizing the channel technology the electron mobility can be significantly improved. We have studied the influence of technological parameters on transport properties on the series of GaN layers resembling a HEMT channel. We pay most attention to the layer growth using TEG precursor. The examined parameters were type of reactor atmosphere, growth temperature, growth rate influenced by precursor concentration and reactor pressure. Using optimized parameters for growth of a HEMT structure, we have succeeded in increasing the electron mobility in 2DEG by 30 %.
Trvalý link: https://hdl.handle.net/11104/0342034