Exploiting ionization dynamics in the nitrogen vacancy center for rapid, high-contrast spin, and charge state initialization

0568008 - ÚOCHB 2024 RIV US eng J - Článek v odborném periodiku
Wirtitsch, D. - Wachter, G. - Reisenbauer, S. - Gulka, Michal - Ivády, V. - Jelezko, F. - Gali, A. - Nesladek, M. - Trupke, M.
Exploiting ionization dynamics in the nitrogen vacancy center for rapid, high-contrast spin, and charge state initialization.
Physical Review Research. Roč. 5, č. 1 (2023), č. článku 013014. E-ISSN 2643-1564
GRANT EU: European Commission(XE) 101038045 - ChemiQS
Institucionální podpora: RVO:61388963
Klíčová slova: room temperature * silicon carbide * spectroscopy
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 4.2, rok: 2022
Způsob publikování: Open access
https://doi.org/10.1103/PhysRevResearch.5.013014

We propose and experimentally demonstrate a method to strongly increase the sensitivity of spin measurements on nitrogen vacancy (NV) centers in diamond, which can be readily implemented in existing quantum sensing experiments. While charge state transitions of this defect are generally considered a parasitic effect to be avoided, we show here that these can be used to significantly increase the NV center's spin contrast, a key quantity for high-sensitivity magnetometry and high-fidelity state readout. The protocol consists of a two-step procedure, in which the charge state of the defect is first purified by a strong laser pulse, followed by weak illumination to obtain high spin polarization. We observe a relative improvement of the readout contrast by 17% and infer a reduction of the initialization error of more than 50%. The contrast enhancement is accompanied by a beneficial increase of the readout signal. For long sequence durations, typically encountered in high-resolution magnetometry, a measurement speedup by a factor of >1.5 is extracted, and we find that the technique is beneficial for sequences of any duration. Additionally, our findings give detailed insight into the charge and spin polarization dynamics of the NV center and provide actionable insights for direct optical, spin-to-charge, and electrical readout of solid-state spin centers.
Trvalý link: https://hdl.handle.net/11104/0339336