Ga vacancies in MOVPE prepared GaN layers - correlation with other point defects

0567935 - FZÚ 2023 RIV PL eng A - Abstrakt
Hospodková, Alice - Čížek, J. - Hájek, František - Hubáček, Tomáš - Dominec, Filip - Kuldová, Karla - Liedke, M.O. - Butterling, M. - Wagner, A.
Ga vacancies in MOVPE prepared GaN layers - correlation with other point defects.
PCCG 2022, Polish Conference on Crystal Growth 2022 - Book of Abstracts. Gdańsk: Gdańsk University of Technology, 2022 - (Klimczuk, T.). s. 23-23
[Polish Conference on Crystal Growth 2022 /PCCG 2022/. 19.06.2022-24.06.2022, Gdańsk]
Grant CEP: GA MŠMT(CZ) EF16_019/0000760
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * GaN * defects * vacancies
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
https://event.mostwiedzy.pl/event/2/attachments/52/145/PCCG_Abstract_book_updated.pdf

Defects related to gallium vacancies (VGa) were studied in a set of GaN samples prepared by MOVPE under different technological conditions by Variable energy positron annihilation spectroscopy VEPAS. Different correlations between layers grown from TMGa and TEGa were observed. Increased VGa concentration enhances excitonic luminescence, probably VGa prevents formation of some other highly efficient nonradiative defect. Anticorrelation between VGa formation and carbon contamination was also observed.
Trvalý link: https://hdl.handle.net/11104/0339197