Controlling defect chemistry in InTe by saturation annealing

0565306 - FZÚ 2023 RIV US eng J - Článek v odborném periodiku
Misra, S. - Levinský, Petr - Hejtmánek, Jiří - Candolfi, C. - Lenoir, B.
Controlling defect chemistry in InTe by saturation annealing.
ACS Applied Energy Materials. Roč. 5, č. 11 (2022), s. 13714-13722. ISSN 2574-0962
Grant CEP: GA MŠMT(CZ) LM2018096; GA MŠMT(CZ) EF16_019/0000760
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: Tin selenide * thermoelectric properties * defects * carrier concentration
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 6.4, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1021/acsaem.2c02364

Achieving a precise control of defects in chalcogenide semiconductors is paramount to optimizing their thermoelectric properties. Recently, p-type InTe has emerged as a potential candidate for thermoelectric applications in power generation, mainly due to its extremely low lattice thermal conductivity. Here, we show that the concentration of inherent In vacancies in both single-crystalline and polycrystalline InTe samples can be successfully controlled through saturation annealing. This process, performed on both the In-rich and Te-rich sides of the solidus line at 943, 893, 843, and 943 K, respectively, results in variations in the hole concentration from 4.9 to 8.5 × 1019 cm-3 at 300 K. This narrow density range suggests that the defect chemistry in InTe plays a less critical role in determining its thermoelectric properties compared to other state-of-the-art thermoelectric chalcogenides.
Trvalý link: https://hdl.handle.net/11104/0336867