Large imprint in epitaxial 0.67Pb(Mg.sub.1/3./sub.Nb.sub.2/3./sub.)O.sub.3./sub.-0.33PbTiO.sub.3./sub. thin films for piezoelectric energy harvesting applications

0564640 - FZÚ 2023 RIV US eng J - Článek v odborném periodiku
Belhadi, J. - Hanani, Z. - Shepelin, N.A. - Bobnar, V. - Koster, G. - Hlinka, Jiří - Pergolesi, D. - Lippert, T. - El Marssi, M. - Spreitzer, M.
Large imprint in epitaxial 0.67Pb(Mg_1/3Nb_2/3)O₃-0.33PbTiO₃ thin films for piezoelectric energy harvesting applications.
Applied Physics Letters. Roč. 121, č. 21 (2022), č. článku 182903. ISSN 0003-6951. E-ISSN 1077-3118
Grant ostatní: AV ČR(CZ) StrategieAV21/3
Program: StrategieAV
Institucionální podpora: RVO:68378271
Klíčová slova: relaxor ferroelectrics * piezoelectric * energy harvesting * thin films * PMN-PT
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 4, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1063/5.0115777

Tuning and stabilizing a large imprint in epitaxial relaxor ferroelectric thin films is one of the key factors for designing micro-electromechanical devices with an enhanced figure of merit (FOM). The PMN–33PT is observed to grow coherently on SSO substrates and exhibits large tetragonality compared to bulk PMN–33PT, while on DSO substrates (lattice mismatch of −1.9%), the PMN–33PT film is almost completely relaxed and shows reduced tetragonality. Due to the compressive epitaxial strain, the fully strained PMN–33PT film displays typical ferroelectric P–E hysteresis loops, while the relaxed sample shows relaxor-like P–E loops. The studied PMN–33PT films hold great promise to maximize the FOM toward applications in piezoelectric devices.

Trvalý link: https://hdl.handle.net/11104/0336308