InSe:Ge-doped InSe van der Waals heterostructure to enhance photogenerated carrier separation for self-powered photoelectrochemical-type photodetectors

0563785 - FZÚ 2023 RIV GB eng J - Článek v odborném periodiku
Liao, L. - Wu, B. - Kovalska, E. - Oliveira, F.M. - Azadmanjiri, J. - Mazánek, V. - Valdman, L. - Spejchalova, L. - Xu, C.Y. - Levinský, Petr - Hejtmánek, Jiří - Sofer, Z.
InSe:Ge-doped InSe van der Waals heterostructure to enhance photogenerated carrier separation for self-powered photoelectrochemical-type photodetectors.
Nanoscale. Roč. 14, č. 14 (2022), s. 5412-5424. ISSN 2040-3364. E-ISSN 2040-3372
Grant CEP: GA ČR GA18-12761S
Institucionální podpora: RVO:68378271
Klíčová slova: indium selenide * 2D materials * photoelectrochemical measurements
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 6.7, rok: 2022
Způsob publikování: Omezený přístup

Two-dimensional (2D) van der Waals (vdW) materials with tunable heterostructures and superior optoelectronic properties have opened a new platform for various applications, e.g., field-effect transistors, ultrasensitive photodetectors and photocatalysts. In this work, an InSe/InSe(Ge) (germanium doped InSe) vdW heterostructure is designed to improve the photoresponse performance of sole InSe in a photoelectrochemical (PEC)-type photodetector. Photoelectrochemical measurements demonstrated that this heterostructure has excellent photoresponse characteristics, including a photocurrent density of 9.8 μA cm-2, a photo-responsivity of 64 μA W-1, and a response time/recovery time of 0.128 s/0.1 s.
Trvalý link: https://hdl.handle.net/11104/0335592