Formation of spin-polarized current in antiferromagnetic polymer spintronic field-effect transistors

0563406 - ÚMCH 2023 RIV GB eng J - Článek v odborném periodiku
Sun, S.-J. - Menšík, Miroslav - Ganzorig, C. - Toman, Petr - Pfleger, Jiří
Formation of spin-polarized current in antiferromagnetic polymer spintronic field-effect transistors.
Physical Chemistry Chemical Physics. Roč. 24, č. 42 (2022), s. 25999-26010. ISSN 1463-9076. E-ISSN 1463-9084
Grant CEP: GA MŠMT(CZ) LTAUSA19066
Institucionální podpora: RVO:61389013
Klíčová slova: spintronics * conducting polymers * FET
Obor OECD: Polymer science
Impakt faktor: 3.3, rok: 2022
Způsob publikování: Omezený přístup
https://pubs.rsc.org/en/content/articlelanding/2022/CP/D2CP03119A

We have theoretically investigated the feasibility of constructing a spintronic field-effect transistor with the active channel made of a polymer chain with the antiferromagnetic coupling oriented in the source-to-drain direction. We found two different device function regimes controlling the on-chain spin–charge carrier density by tuning the gate voltage. At higher charge carrier densities, the source–drain current linearly increases with decreasing charge carrier densities. In this regime, no polymer spin-polarized current is observed. Upon reaching a critical gate voltage, the current decreases with decreasing charge densities. It is accompanied by the formation of spin-polarized current, generated by an on-chain process, which can be related to spin–charge spatial distribution symmetry breaking caused either by an application of the source-to-drain voltage (higher spin polarization near the drain), or the breakdown of the Peierls dimerization near chain ends. Numerical simulation of the transistor characteristics suggests that the design of a polymer spintronic field-effect transistor is in principle feasible.

Trvalý link: https://hdl.handle.net/11104/0336166