Band energy diagrams of n-GaInP/n-AlInP(100) surfaces and heterointerfaces studied by X-ray photoelectron spectroscopy

0562792 - FZÚ 2023 RIV NL eng J - Článek v odborném periodiku
Zare Pour, M.A. - Romanyuk, Olexandr - Moritz, D.C. - Paszuk, A. - Maheu, C. - Shekarabi, S. - Hanke, K.D. - Ostheimer, D. - Mayer, T. - Hofmann, J.P. - Jaegermann, W. - Hannappel, T.
Band energy diagrams of n-GaInP/n-AlInP(100) surfaces and heterointerfaces studied by X-ray photoelectron spectroscopy.
Surfaces and Interfaces. Roč. 34, Nov. (2022), č. článku 102384. ISSN 2468-0230. E-ISSN 2468-0230
Grant CEP: GA MŠMT(CZ) EF16_019/0000760
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: heterojunction * XPS * MOVPE * valence band offset * GaInP * AlInP
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 6.2, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.surfin.2022.102384

Lattice matched n-type AlInP(100) charge selective contacts are commonly grown on n-p GaInP(100) top absorbers in high-efficiency III-V multijunction solar or photoelectrochemical cells. In our paper, we investigated chemical composition and electronic properties of n-GaInP/n-AlInP heterostructures by X-ray photoelectron spectroscopy (XPS). 1 nm – 50 nm thick n-AlInP(100) epitaxial layers were grown on n-GaInP(100) buffer layer on n-GaAs(100) substrates by metal organic vapor phase epitaxy. Atomic composition analysis confirmed P-rich termination on surface. Angle-resolved XPS measurements revealed a surface core level shift and the absence of interface core level shifts. We found an upward surface band bending on the (2×2)/c(4×2) surfaces most probably caused by localized mid-gap electronic states. Pinning of the Fermi level by localized electronic states remained in n-GaInP/n-AlInP heterostructures. A valence band offset was derived by XPS.
Trvalý link: https://hdl.handle.net/11104/0334988