Focused ion beam assisted prototyping of graphene/ZnO devices on Zn-polar and O-polar faces of ZnO bulk crystals

0562514 - ÚFE 2023 RIV NL eng J - Článek v odborném periodiku
Tiagulskyi, Stanislav - Yatskiv, Roman - Faitová, Hana - Černohorský, Ondřej - Vaniš, Jan - Grym, Jan
Focused ion beam assisted prototyping of graphene/ZnO devices on Zn-polar and O-polar faces of ZnO bulk crystals.
Physica E: Low-Dimensional Systems and Nanostructures. Roč. 136, February (2022), č. článku 115006. ISSN 1386-9477. E-ISSN 1873-1759
Grant CEP: GA ČR(CZ) GA20-24366S
Institucionální podpora: RVO:67985882
Klíčová slova: Schottky barrier * Graphene * Nanomanipulator * FIB * Surface polarity * ZnO
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 3.3, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.physe.2021.115006

We demonstrate an experimental approach for prototyping heterojunctions formed between graphene and bulk semiconductor substrates. This approach employs focused ion beam milling to fabricate microscale area heterojunctions and in-situ electrical measurements in the chamber of the scanning electron microscope to measure their electrical characteristics. The aim is to limit the impact of defects in graphene on the electrical characteristics of the junctions. The approach is demonstrated on graphene/ZnO structures with different polar faces. On these structures, theoretical predictions pointing to differences in charge transport are experimentally validated
Trvalý link: https://hdl.handle.net/11104/0334836