The influence of Si on the properties of MOVPE grown GaN thin films: Optical and EPR study

0561462 - FZÚ 2023 RIV GB eng J - Článek v odborném periodiku
Buryi, Maksym - Babin, Vladimir - Hubáček, Tomáš - Jarý, Vítězslav - Hájek, František - Kuldová, Karla - Artemenko, Anna - Hospodková, Alice
The influence of Si on the properties of MOVPE grown GaN thin films: Optical and EPR study.
Radiation Measurements. Roč. 157, Sep (2022), č. článku 106842. ISSN 1350-4487. E-ISSN 1879-0925
Grant CEP: GA ČR(CZ) GJ20-05497Y
Výzkumná infrastruktura: CzechNanoLab - 90110
Institucionální podpora: RVO:68378271
Klíčová slova: GaN * thin films * Si doping * luminescence * EPR
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 2, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.radmeas.2022.106842

Metal Organic Vapour Phase epitaxy (MOVPE) grown GaN layers doped with Si were studied by means of radio-, photo- and thermally stimulated luminescence, scintillation decay kinetics, as well as electron paramagnetic resonance. Two luminescence bands were observed: the narrow and fast peaking at about 3.45 eV (ascribed to excitons) and the broad and slow one having maximum at about 2.2 eV (produced by the defect – a carbon occupying nitrogen site). The decay time and the intensity of exciton and defect-related emission exhibit dependence on the doping level of Si. Both bands are getting faster upon the increased Si content. Interestingly, the effect of Si on the conductivity properties of the GaN samples was observed by means of electron paramagnetic resonance.
Trvalý link: https://hdl.handle.net/11104/0334173