Topological insulator Bi.sub.2./sub.Te.sub.3./sub.: The effect of doping with elements from the VIII B column of the periodic table

0561071 - FZÚ 2023 RIV US eng J - Článek v odborném periodiku
Cichoň, Stanislav - Drchal, Václav - Horáková, Kateřina - Cháb, Vladimír - Kratochvílová, Irena - Máca, František - Čermák, P. - Čermák Šraitrová, K. - Navrátil, Jiří - Lančok, Ján
Topological insulator Bi₂Te₃: The effect of doping with elements from the VIII B column of the periodic table.
Journal of Physical Chemistry C. Roč. 126, č. 34 (2022), s. 14529-14536. ISSN 1932-7447. E-ISSN 1932-7455
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR GA19-16315S
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: topological insulator * electronic structure * photoemission spectroscopy * ab initio simulation * doping
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 3.7, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1021/acs.jpcc.2c02724

We studied the doping of a Bi2Te3 single crystal using angle resolved photoemission and ab initio electronic structure calculations. We find that at the surface the typical bulk p-type conductivity is transformed to the n-type. The dopants from the VIII B column (Fe, Ru, and Os) give rise to the shift of the Dirac cone at the surface in the direction from the valence band maximum to the conductivity band minimum. The rearrangement of the Bi2Te3 surface electronic structure caused by doping is linked to the pinning of the Fermi level in the bulk gap and its comparison with experimental data indicates that the dopants substitute Bi atoms rather than they occupy interstitial positions.

Trvalý link: https://hdl.handle.net/11104/0334047