Effect of MOVPE growth conditions on germanium doped (In)GaN layers

0560116 - FZÚ 2023 RIV DE eng A - Abstrakt
Hubáček, Tomáš - Kuldová, Karla - Gedeonová, Zuzana - Hájek, František - Hubík, Pavel - Pangrác, Jiří - Oswald, Jiří - Hospodková, Alice
Effect of MOVPE growth conditions on germanium doped (In)GaN layers.
Book of Abstracts of the 20th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XX. Stuttgart: University of Stuttgart, 2022 - (Jetter, M.; Scholz, F.). s. 208-208
[International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XX /20./. 10.07.2022-14.07.2022, Stuttgart]
Grant CEP: GA MŠMT(CZ) LTAIN19163
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * GaN * InGaN
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

The GaSb based structures were grown in an AIXTRON 200 system horizontal quartz reactor with RF heater, nonrotating graphite susceptor and equipped with Laytec EPIRAS 200TT RAS and True Temperature measurement. The precursors for the GaSb/InGaAsSb/AlGaAsSb structure we used trimethylindium TMIn, triethylgallium TEGa, tris‑tertiarybutylaluminium TtBAl, tertiarybutylarsine TBAs and triethylantimony TESb. As dopants diethylzinc DEZn and diethyltellur DETe has been used. Optimal technological conditions were found for the growth and doping of complex IR detector structure consisting GaSb, InGaAsSb and AlGaAsSb layers. Our results may help to understand the RAS in situ monitoring in InAs-GaSb system Processing and full characterization of grown eSWIR epi-structures are in progress.
Trvalý link: https://hdl.handle.net/11104/0333147