MOCVD growth of antimonide compound semiconductors

0560114 - FZÚ 2023 DE eng A - Abstrakt
Klos, K. - Pangrác, Jiří - Melichar, Karel - Hospodková, Alice
MOCVD growth of antimonide compound semiconductors.
Book of Abstracts of the 20th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XX. Stuttgart: University of Stuttgart, 2022 - (Jetter, M.; Scholz, F.). s. 179-179
[International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XX /20./. 10.07.2022-14.07.2022, Stuttgart]
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * GaSb * InGaAsSb * AlGaAsSb
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

The GaSb based structures were grown in an AIXTRON 200 system horizontal quartz reactor with RF heater, nonrotating graphite susceptor and equipped with Laytec EPIRAS 200TT RAS and True Temperature measurement. The precursors for the GaSb/InGaAsSb/AlGaAsSb structure we used trimethylindium TMIn, triethylgallium TEGa, tris‑tertiarybutylaluminium TtBAl, tertiarybutylarsine TBAs and triethylantimony TESb. As dopants diethylzinc DEZn and diethyltellur DETe has been used. Optimal technological conditions were found for the growth and doping of complex IR detector structure consisting GaSb, InGaAsSb and AlGaAsSb layers. Our results may help to understand the RAS in situ monitoring in InAs-GaSb system Processing and full characterization of grown eSWIR epi-structures are in progress.
Trvalý link: https://hdl.handle.net/11104/0333146