Acceleration of the yellow band luminescence in GaN layers via Si and Ge doping

0558906 - FZÚ 2023 RIV NL eng J - Článek v odborném periodiku
Vaněk, Tomáš - Jarý, Vítězslav - Hubáček, Tomáš - Hájek, František - Kuldová, Karla - Gedeonová, Zuzana - Babin, Vladimir - Remeš, Zdeněk - Buryi, Maksym
Acceleration of the yellow band luminescence in GaN layers via Si and Ge doping.
Journal of Alloys and Compounds. Roč. 914, Sep (2022), č. článku 165255. ISSN 0925-8388. E-ISSN 1873-4669
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR(CZ) GJ20-05497Y
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: semiconductors * nitride materials * vapor deposition * optical properties * luminescence
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 6.2, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.jallcom.2022.165255

A huge acceleration of the yellow band defect luminescence (YB) with increasing Si and Ge doping concentration in GaN layers has been observed and studied. The donor doping concentrations in the n-type GaN varied from 5 × 10E16 cm−3 to 1.5 × 10E19 cm−3 for undoped, Si-doped, and Ge-doped samples. Consequently, the fastest component of the photoluminescence (PL) decay time curve accelerated from 0.9 ms to 40.3 ns, and the mean decay time from 20 ms to 260 ns with increasing doping concentration. We have proposed an explanation based on a theoretical model of donor-acceptor pair transition (DAP) and electron-acceptor (e-A0) recombination at higher dopant concentrations, which is supported by several measurement techniques as room-temperature radioluminescence (RL), PL measurements or thermally stimulated luminescence (TSL).
Trvalý link: https://hdl.handle.net/11104/0332401