New chemical pathway for large-area deposition of doped diamond films by linear antenna microwave plasma chemical vapor deposition

0558649 - FZÚ 2023 RIV CH eng J - Článek v odborném periodiku
Marton, M. - Vojs, M. - Michniak, P. - Behúl, M. - Řeháček, V. - Pifko, M. - Stehlík, Štěpán - Kromka, Alexander
New chemical pathway for large-area deposition of doped diamond films by linear antenna microwave plasma chemical vapor deposition.
Diamond and Related Materials. Roč. 126, June (2022), č. článku 109111. ISSN 0925-9635. E-ISSN 1879-0062
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA MŠMT LM2018110
Grant ostatní: AV ČR(CZ) CSIR-21-04; OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Program: Bilaterální spolupráce
Institucionální podpora: RVO:68378271
Klíčová slova: boron doped diamond * large area deposition * trimethyl borate * linear antenna microwave CVD
Obor OECD: Materials engineering
Impakt faktor: 4.1, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.diamond.2022.109111

We present an implementation of a liquid-phase boron precursor trimethyl borate for large-area deposition of boron-doped diamond films by linear antenna microwave plasma CVD. Trimethyl borate vapors were used not only as a source of boron for doping but also as the only source of carbon and oxygen, while completely saturating the requirements for the growth of high-quality boron-doped diamond films. However, to allow for control over the doping level through maintaining the B/C and B/O ratios, carbon dioxide was employed as an additional source of carbon and oxygen. The film morphology was controllable from microcrystalline to ultrananocrystalline by changing the concentrations of trimethyl borate. Using this unique precursor system, we were able to grow diamond films with a doping level in range from 8 x 10e17 cm(-3) to 2 x 10e22 cm-3 and resistivity as low as 1.16 x 10e-2 omega.cm.
Trvalý link: https://hdl.handle.net/11104/0336677