Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers

0557316 - FZÚ 2023 RIV CH eng J - Článek v odborném periodiku
Hazdra, P. - Laposa, A. - Šobáň, Zbyněk - Taylor, Andrew - Lambert, Nicolas - Povolný, V. - Kroutil, J. - Gedeonová, Zuzana - Hubík, Pavel - Mortet, Vincent
Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers.
Diamond and Related Materials. Roč. 126, June (2022), č. článku 109088. ISSN 0925-9635. E-ISSN 1879-0062
Grant CEP: GA ČR(CZ) GA20-11140S; GA MŠMT(CZ) EF16_019/0000760; GA MŠMT LM2018110
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: diamond * Schottky diodes * boron-doping * molybdenum
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 4.1, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.diamond.2022.109088

Pseudo-vertical diodes on 113 homoepitaxial boron-doped diamond (h-BDD) were fabricated using Mo for both Schottky and ohmic contacts. After metal deposition, diodes were stabilized by annealing for 20 min at 300°C and their I-V and C-V characteristics were measured at temperatures from 30 to 180°C. Results show that Mo forms a very good and stable Schottky contact on 113 h-BDD. At 180°C, forward current densities higher than 1kA/cm2 are achieved, while the reverse current density stays unchanged at 10−8 A/cm2. The ideality factor of the diode I-V characteristic drops to 1.23 and the barrier height of the Schottky contact increases to 1.71 eV. This effect is attributed to inhomogeneity in the Schottky barrier. These characteristics are fully comparable with those of the best Schottky diodes fabricated on 100 h-BDD. Results confirm that the use of 113 h-BDD for the fabrication of high-temperature power devices is advantageous, as it enables high quality Schottky and ohmic contacts.
Trvalý link: http://hdl.handle.net/11104/0331353