Radiation-induced phase separation in nanostructured Hf-In-C ternary thin films under irradiation with 200 keV Ar.sup.+./sup. ion beam

0556898 - ÚJF 2023 RIV GB eng J - Článek v odborném periodiku
Vacík, Jiří - Cannavó, Antonino - Bakardjieva, Snejana - Kupčík, Jaroslav - Lavrentiev, Vasyl - Ceccio, Giovanni - Horák, Pavel - Němeček, J. - Verna, A. - Parmeggiani, M. - Calcagno, L. - Klie, R. - Duchon, J.
Radiation-induced phase separation in nanostructured Hf-In-C ternary thin films under irradiation with 200 keV Ar⁺ ion beam.
Radiation Effects and Defects in Solids. Roč. 177, 1-2 (2022), s. 137-160. ISSN 1042-0150. E-ISSN 1029-4953
Grant CEP: GA MŠMT EF16_013/0001812; GA ČR(CZ) GA18-21677S
Výzkumná infrastruktura: CANAM II - 90056; CzechNanoLab - 90110
Institucionální podpora: RVO:61389005 ; RVO:61388980
Klíčová slova: ion beam synthesis * Hf-In-C nanocomposite * Hf2InC MAX phase * HfC0 * (95) phase * radiation tolerance
Obor OECD: Nuclear related engineering; Inorganic and nuclear chemistry (UACH-T)
Impakt faktor: 1, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1080/10420150.2022.2049788

Thin films consisting of 17 groups of Hf/In/C multilayers cyclically alternating layers of Hf, In and C each with a thickness of 4-5 nm were synthesized by ion sputtering using a 25 keV Ar+ ion beam with 400 mu A current and targets made of pure hafnium, indium and carbon. The films were subsequently annealed in vacuum at 120 degrees C for 24 hours to induce intermixing of elements phases, their interaction, and formation of the Hf-In-C nanostructures (including the Hf2InC MAX phase). After fabrication, a part of the pristine (as deposited) samples was irradiated by 200 keV Ar+ ions at high fluences 10(15) and 10(17) cm(-2). Both samples (as prepared and irradiated) were analyzed by IBA nuclear analytical methods, as well as by AFM and TEM microscopic techniques, and by XPS and profilometry to understand the microstructural evolution. Moreover, nanoindentation analysis was performed to assess the effects of ion irradiation on the microstructure and mechanical properties of the films. The experimental results showed that thin Hf-In-C nanostructured films can be formed by ion sputtering with promising mechanical parameters. The irradiated Hf-In-C films were found to be resistant only up to a fluence of about 10(15) Ar cm(-2). At higher fluences it degrades, and Hf2InC transforms to the binary HfC0.95 phase due to sublimation of In. At 10(17) cm(-2) the original matrix (including M(2)AX) is destroyed, and instead, a mixture of MX binary phases (e.g. HfC0.95) and crystalline oxides (e.g. HfO2 and In2O3) are formed.
Trvalý link: http://hdl.handle.net/11104/0331530