Highly phosphorus-doped polycrystalline diamond growth and properties

0556566 - FZÚ 2023 RIV CH eng J - Článek v odborném periodiku
Lambert, Nicolas - Weiss, Zdeněk - Klimša, Ladislav - Kopeček, Jaromír - Gedeonová, Zuzana - Hubík, Pavel - Mortet, Vincent
Highly phosphorus-doped polycrystalline diamond growth and properties.
Diamond and Related Materials. Roč. 125, May (2022), č. článku 108964. ISSN 0925-9635. E-ISSN 1879-0062
Grant CEP: GA ČR(CZ) GA21-03538S
Výzkumná infrastruktura: CzechNanoLab - 90110
Institucionální podpora: RVO:68378271
Klíčová slova: diamond growth * polycrystalline diamond * phosphorus doping * pulsed gas * microwave plasma enhanced chemical vapor deposition
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 4.1, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.diamond.2022.108964

In this work, phosphorus-doped polycrystalline diamond layers were grown using a new gas control process to increase the incorporation of phosphorus in diamond. Topographical characteristics and crystalline quality of the phosphorus-doped polycrystalline diamond layers grown on Si substrates were analyzed using Scanning Electron Microscopy (SEM) and Raman spectroscopy. The phosphorus concentration was determined using Glow-Discharge Optical Emission Spectroscopy (GDOES). Polycrystalline diamond layers have a good crystalline quality with a sp3/sp2 carbon ration over 75%. The growth rate reaches up to 440 nm∙h−1, and the phosphorus concentration is well above 1020 cm−3.
Trvalý link: http://hdl.handle.net/11104/0330728