A CMOS-compatible morphotropic phase boundary

0556467 - FZÚ 2023 RIV GB eng J - Článek v odborném periodiku
Kashir, Alireza - Hwang, H.
A CMOS-compatible morphotropic phase boundary.
Nanotechnology. Roč. 32, č. 44 (2021), č. článku 445706. ISSN 0957-4484. E-ISSN 1361-6528
Institucionální podpora: RVO:68378271
Klíčová slova: high-k dielectrics * HfO₂ * ZrO₂ * CMOS * equivalent oxide thickness
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 3.953, rok: 2021
Způsob publikování: Omezený přístup
https://doi.org/10.1088/1361-6528/ac1716

Morphotropic phase boundaries (MPBs) show substantial piezoelectric and dielectric responses, which have practical applications. The predicted existence of MPB in HfO2–ZrO2 solid solution thin film has provided a new way to increase the dielectric properties of a silicon-compatible device. Here, we present a new fabrication design by which the density of MPB rMPB and consequently the dielectric constant òr of HfO2–ZrO2 thin film was considerably increased. The rMPB was controlled by fabrication of a 10 nm [1 nm Hf0.5Zr0.5O2 (ferroelectric)/1 nm ZrO2 (antiferroelectric)] nanolaminate followed by an appropriate annealing process.
Trvalý link: http://hdl.handle.net/11104/0330677