Source-drain electrical conduction and radiation detection in graphene-based field effect transistor (GFET)

0556281 - ÚJF 2023 RIV GB eng J - Článek v odborném periodiku
Torrisi, L. - Salvato, G. - Cutroneo, Mariapompea - Librizzi, F. - Torrisi, A. - Silipigni, L.
Source-drain electrical conduction and radiation detection in graphene-based field effect transistor (GFET).
Journal of Instrumentation. Roč. 17, č. 2 (2022), č. článku P02008. ISSN 1748-0221. E-ISSN 1748-0221
Grant CEP: GA MŠMT EF16_013/0001812
Výzkumná infrastruktura: CANAM II - 90056
Institucionální podpora: RVO:61389005
Klíčová slova: Materials for solid-state detectors * Photon detectors for UV * visible and IR photons (solid-state) * Radiation damage to detector materials (solid state)
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 1.3, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1088/1748-0221/17/02/P02008

Electrical measurements on a graphene field effect transistor (GFET) are presented and discussed for its characterization in vacuum and in air. In this last environment three low output power continuous wave (CW) led lasers and a UV lamp have been used to study the illumination effects at wavelengths from the near infrared (NIR) to red, green up to near UV. In air the device is sensitive to visible and UV radiation. The visible light produces charge carriers increasing the source-drain current. Instead, the UV radiation induces the graphene oxidation decreasing the source-drain current in a permanent way. Small temperature increments, up to about 55 degrees C, increase the electrical conduction. Larger temperatures and prolonged heating in air generate oxidation, decreasing the source-drain current. As far as the NIR radiation is concerned, no effect is observed. Therefore, these preliminary investigations indicate that the device can be employed as visible and UV radiation detector.
Trvalý link: http://hdl.handle.net/11104/0330564