Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth

0556262 - FZÚ 2023 RIV CH eng J - Článek v odborném periodiku
Mortet, Vincent - Taylor, Andrew - Davydova, Marina - Jiránek, J. - Fekete, Ladislav - Klimša, Ladislav - Šimek, Daniel - Lambert, Nicolas - Sedláková, Silvia - Kopeček, Jaromír - Hazdra, P.
Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth.
Diamond and Related Materials. Roč. 122, Feb (2022), č. článku 108887. ISSN 0925-9635. E-ISSN 1879-0062
Grant CEP: GA ČR(CZ) GA20-11140S; GA MŠMT(CZ) EF16_019/0000760
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Výzkumná infrastruktura: CzechNanoLab - 90110
Institucionální podpora: RVO:68378271
Klíčová slova: diamond boron-doping * substrate crystallographic orientation * plasma-enhanced chemical vapor deposition
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 4.1, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.diamond.2022.108887

Boron-doped diamond layers have been grown by MW PECVD on substrates with a misorientation over the range of 0 to 90° relative to the (100) crystalline plane while keeping all other growth conditions constant. Deposited layers were characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy. The deposition rate, surface roughness, and boron incorporation vary according to the substrate misorientation. These results show the essential need for rigorous control of the substrate crystalline orientation in the synthesis of doped diamond for electronic applications. Thick, smooth, and free of surface defects boron-doped epitaxial diamond layers were obtained over a broad range of crystalline orientations at high growth rates and high boron incorporation efficiency.
Trvalý link: http://hdl.handle.net/11104/0330553