Growth and comparison of high-quality MW PECVD grown B doped diamond layers on {118}, {115} and {113} single crystal diamond substrates

0556013 - FZÚ 2023 RIV CH eng J - Článek v odborném periodiku
Taylor, Andrew - Baluchová, Simona - Fekete, Ladislav - Klimša, Ladislav - Kopeček, Jaromír - Šimek, Daniel - Vondráček, Martin - Míka, L. - Fischer, J. - Schwarzová-Pecková, K. - Mortet, Vincent
Growth and comparison of high-quality MW PECVD grown B doped diamond layers on {118}, {115} and {113} single crystal diamond substrates.
Diamond and Related Materials. Roč. 123, Mar (2022), č. článku 108815. ISSN 0925-9635. E-ISSN 1879-0062
Grant CEP: GA ČR(CZ) GA20-03187S; GA MŠMT(CZ) EF16_019/0000760
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Výzkumná infrastruktura: CzechNanoLab - 90110
Institucionální podpora: RVO:68378271
Klíčová slova: single crystal diamond * boron-doping level * crystallographic orientation * electron transfer kinetics * Surface/chemical analysis
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 4.1, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.diamond.2021.108815

The use of {113} oriented single crystal diamond substrates has been reported for CVD growth of high-quality p-type layers with increased doping efficiency, compared to the {100} orientation, and excellent electrical properties. In this work we expand the range of crystal orientations to include the {118} and {115} planes and study the effect of B doping level in the gas phase with B/C ratios from 250 up to 2000 ppm. We demonstrate the growth of high-quality B doped SCD layers, with low RMS roughness (<2 nm) and high surface chemical purity (99% C with >1% B) for all orientations. Boron incorporation is shown to be dependent not only on the B/C in the gas phase, but also on the crystallographic orientation, with orientations with a higher density of {100}/{111} steps and risers exhibiting higher B incorporation into the solid from the gas phase (4 × 1019 cm−3 up to 1 × 1021 cm−3). Finally, using electro-chemical techniques, we confirm, for the first-time, high-quality electrodes on such orientations.
Trvalý link: http://hdl.handle.net/11104/0330378