Microstructural modifications induced in Si.sup.+-./sup. implanted yttria-stabilised zirconia: a combined RBS-C, XRD and Raman investigation

0555813 - ÚJF 2023 RIV GB eng J - Článek v odborném periodiku
Mikšová, Romana - Malinský, Petr - Cutroneo, Mariapompea - Holý, V. - Sofer, Z. - Cajzl, J. - Debelle, A. - Nowicki, L. - Macková, Anna
Microstructural modifications induced in Si^+- implanted yttria-stabilised zirconia: a combined RBS-C, XRD and Raman investigation.
Physical Chemistry Chemical Physics. Roč. 24, č. 10 (2022), s. 6290-6301. ISSN 1463-9076. E-ISSN 1463-9084
Grant CEP: GA MŠMT EF16_013/0001812
Výzkumná infrastruktura: CANAM II - 90056
Institucionální podpora: RVO:61389005
Klíčová slova: microstructural modifications * radiation damage * RBS-C, XRD and Raman investigation
Obor OECD: Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)
Impakt faktor: 3.3, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1039/D1CP04901A

The structural differences in (100)-, (110)- and (111)-oriented cubic yttria-stabilised zirconia (YSZ) single crystals after implantation with 2 MeV Si+ ions at the fluences of 5 x 10(15), 1 x 10(16) and 5 x 10(16) cm(-2) were studied using Rutherford backscattering spectrometry in the channelling mode (RBS-C), X-ray diffraction (XRD) and Raman spectroscopy. The RBS-C results show that the damage accumulation in the 110 direction exhibits a lower level of disorder (<0.3) than the other orientations (<0.6) and it seems that the (110) crystallographic orientation is the most resistant to radiation damage. The experimental results from the RBS measurement were compared with the results from the XRD measurements. The XRD data were analysed using the standard two-beam dynamical X-ray diffraction theory and the pure isotropic strain was deduced from the fit for the fluence of 5 x 10(15) cm(-2). It was shown that the maximum value of the isotropic strain does not depend on the surface orientation. The increase in signal intensity at similar to 689 cm(-1) is probably related to an increase in implantation defects such as oxygen vacancies.
Trvalý link: http://hdl.handle.net/11104/0330372