Enhanced thermoelectric performance of InTe through Pb doping

0552125 - FZÚ 2022 RIV GB eng J - Článek v odborném periodiku
Misra, S. - Léon, A. - Levinský, Petr - Hejtmánek, Jiří - Lenoir, B. - Candolfi, C.
Enhanced thermoelectric performance of InTe through Pb doping.
Journal of Materials Chemistry C. Roč. 9, č. 40 (2021), s. 14490-14496. ISSN 2050-7526. E-ISSN 2050-7534
Grant CEP: GA ČR GA18-12761S; GA MŠMT(CZ) LM2018096
Institucionální podpora: RVO:68378271
Klíčová slova: thermoelectric measurements, * chalcogenide semiconductors * Pb doping
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 8.067, rok: 2021
Způsob publikování: Omezený přístup
https://doi.org/10.1039/d1tc04069c

Chalcogenide semiconductors continue to be of prime interest for designing novel efficient materials for energy-conversion applications. Among them, the narrow-band-gap p-type semiconductor InTe exhibits high thermoelectric performance that mostly stems from its poor ability to transport heat. Here, we show that its thermoelectric figure of merit can be further enhanced by finely tuning the hole concentration through Pb doping. X-ray diffraction and scanning electron microscopy performed on the polycrystalline series In1-xPbxTe confirm that Pb substitutes for In with an estimated solubility limit below 1%.
Trvalý link: http://hdl.handle.net/11104/0327289