Effect of the substrate crystalline orientation on the surface morphology and boron incorporation into epitaxial diamond layers

0551983 - FZÚ 2022 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Voves, J. - Pošta, A. - Davydova, Marina - Laposa, A. - Povolný, V. - Hazdra, P. - Lambert, Nicolas - Sedláková, Silvia - Mortet, Vincent
Effect of the substrate crystalline orientation on the surface morphology and boron incorporation into epitaxial diamond layers.
NANOCON 2020. 12th International Conference on Nanomaterials - Research & Application. Conference proceedings. Ostrava: TANGER, 2021, s. 98-102. ISBN 978-80-87294-98-7. ISSN 2694-930X.
[International Conference NANOCON 2020 /12./. Brno (CZ), 21.10.2020-23.10.2020]
Grant CEP: GA ČR(CZ) GA20-11140S; GA MŠMT(CZ) EF16_019/0000760
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: diamond * epitaxy * defects * boron doping * Raman mapping
Obor OECD: Coating and films

Epitaxial growth of diamond is critically important for the fabrication of diamond-based electronic devices. The emerging study of the epitaxial diamond growth on the (113) vicinal surfaces evidences highly needed high growth rates and low structural defects concentrations with both p- and n-type doping. In this work, we compare the morphology and dopant concentration incorporation of heavily boron-doped (113) epitaxial diamond layers with conventionally studied (100) and (111) epitaxial layers. Epitaxial layers were grown using resonance cavity Microwave Plasma Enhanced Chemical Vapor Deposition (MWPECVD) system. The surface morphology of epitaxial layers was studied by optical microscopy and atomic force microscopy, whereas the boron incorporation homogeneity was determined by Raman spectroscopy mapping.
Trvalý link: http://hdl.handle.net/11104/0327191