Investigation of GaN thin films by electrically detected magnetic resonance and luminescence techniques

0549953 - FZÚ 2022 RIV SK eng C - Konferenční příspěvek (zahraniční konf.)
Buryi, Maksym - Laguta, Valentyn - Babin, Vladimir - Remeš, Zdeněk - Hubáček, Tomáš
Investigation of GaN thin films by electrically detected magnetic resonance and luminescence techniques.
Proceedings of ADEPT - ADEPT 2021. Žilina: University of Žilina, 2021 - (Jandura, D.; Maniaková, P.; Lettrichová, I.; Kováč, jr., J.), s. 41-44. ISBN 978-80-554-1806-3.
[9th International Conference on Advances in Electronic and Photonic Technologies - ADEPT 2021. Podbanské (SK), 20.09.2021-23.09.2021]
Grant CEP: GA ČR(CZ) GJ20-05497Y
Institucionální podpora: RVO:68378271
Klíčová slova: GaN:Si * EPR and EDMR * luminescence
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

To have better insight into the energy transfer and defect creation processes occurring in the InGaN/GaN multiple quantum well (MQW) structures the detailed study of the Si-doped (18 ppm) GaN epitaxial layers in comparison with undoped GaN prepared by metal-organic vapor phase epitaxy (MOVPE) technology is proposed. It has been found that the Si doping plays significant role in the position and intensity level of the exciton and defect emission. Moreover, the Si doping resulted in passivation of defects.
Trvalý link: http://hdl.handle.net/11104/0325864