Influence of SiON interlayer on the diamond/GaN heterostructures studied by Raman and SIMS measurements

0546598 - FZÚ 2022 RIV CH eng J - Článek v odborném periodiku
Izsák, Tibor - Vanko, G. - Babčenko, Oleg - Vincze, A. - Vojs, M. - Zaťko, B. - Kromka, Alexander
Influence of SiON interlayer on the diamond/GaN heterostructures studied by Raman and SIMS measurements.
Materials Science and Engineering B-Advanced Functional Solid-State Materials. Roč. 273, Nov. (2021), č. článku 115434. ISSN 0921-5107. E-ISSN 1873-4944
Grant CEP: GA MŠMT LM2018110; GA MŠMT(CZ) 8X20035; GA MŠMT(CZ) EF16_019/0000760
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: polycrystalline diamond * GaN * Raman spectroscopy * stress * SIMS
Obor OECD: Coating and films
Impakt faktor: 3.407, rok: 2021
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.mseb.2021.115434

The effect of silicon oxynitride (SiON) layer on the thermally-induced stress of diamond-coated AlGaN/GaN heterostructures was studied by Raman and SIMS spectroscopy. Diamond films (0.8 or 2.8 µm in thickness) were grown by MWCVD on selected areas of AlGaN/GaN/Si substrates with SiON interlayer. The stress in diamond became tensile for the thinner strip in the range of 0÷0.5 GPa and compressive for the thicker strip in the range of -0.6 ÷ -0.1 GPa both measured at temperatures ranging from 50 to 400°C. The applied SiON interlayer positively influenced the induced stress (Δstress decreased by about 0.14 GPa compared to the sample without SiON) independently on the thickness of the diamond film. SIMS depth profiling was applied to analyse the influence of diamond CVD on the AlGaN/GaN interface of SiON passivated samples. As observed, the hydrogen and carbon atoms were trapped in the SiON which acted as a stop layer.
Trvalý link: http://hdl.handle.net/11104/0323195