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Effect of Auger recombination on transient optical properties in XUV and soft X-ray irradiated silicon nitride
- 1.0545328 - FZÚ 2022 RIV DE eng J - Článek v odborném periodiku
Tkachenko, V. - Lipp, V. - Buescher, M. - Capotondi, F. - Hoeppner, H. - Medvedev, Nikita - Pedersoli, E. - Prandolini, M.J. - Rossi, G.M. - Tavella, F. - Toleikis, S. - Windeler, M. - Ziaja, B. - Teubner, U.
Effect of Auger recombination on transient optical properties in XUV and soft X-ray irradiated silicon nitride.
Scientific Reports. Roč. 11, č. 1 (2021), č. článku 5203. ISSN 2045-2322. E-ISSN 2045-2322
Grant CEP: GA MŠMT LTT17015
GRANT EU: European Commission(XE) 654148 - LASERLAB-EUROPE
Institucionální podpora: RVO:68378271
Klíčová slova: temporal diagnostics of FEL pulses * optical properties of silicon nitride irradiated by XUV and soft X-ray
Obor OECD: Fluids and plasma physics (including surface physics)
Impakt faktor: 4.997, rok: 2021 ; AIS: 1.208, rok: 2021
Způsob publikování: Open access
DOI: https://doi.org/10.1038/s41598-021-84677-w
Spatially encoded measurements of transient optical transmissivity became a standard tool for temporal diagnostics of free-electron-laser (FEL) pulses, as well as for the arrival time measurements in X-ray pump and optical probe experiments. The modern experimental techniques can measure changes in optical coefficients with a temporal resolution better than 10 fs. Carrier transport within the material and out of its significantly decrease the number of carriers. This would strongly affect the transient optical properties, making the diagnostic measurement inaccurate. We analyze in detail the effects of those processes on the optical properties of XUV and soft X-ray irradiated Si3N4, on sub-picosecond timescales. Theoretical predictions are compared with the published results of two experiments at FERMI and LCLS facilities, and with our own recent measurement.
Trvalý link: http://hdl.handle.net/11104/0322052
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