Crystal growth and optical properties of Ce-doped (La,Y).sub.2./sub.Si.sub.2./sub.O.sub.7./sub. single crystal

0545158 - FZÚ 2022 RIV NL eng J - Článek v odborném periodiku
Horiai, Takahiko - Páterek, Juraj - Pejchal, Jan - Jarošová, Markéta - Rohlíček, Jan - Kurosawa, S. - Hanada, T. - Masao, Y. - Yamaji, A. - Satoshi, T. - Hiroki, S. - Ohashi, Y. - Kamada, K. - Yokota, Y. - Yoshikawa, A. - Nikl, Martin
Crystal growth and optical properties of Ce-doped (La,Y)₂Si₂O₇ single crystal.
Journal of Crystal Growth. Roč. 572, Oct (2021), č. článku 126252. ISSN 0022-0248. E-ISSN 1873-5002
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA MŠMT(CZ) EF18_053/0016627
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760; OP VVV - Mobility FZU 2(XE) CZ.02.2.69/0.0/0.0/18_053/0016627
Institucionální podpora: RVO:68378271
Klíčová slova: scintillator * crystal growth * luminescence
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 1.830, rok: 2021
Způsob publikování: Open access s časovým embargem

We have grown Ce-doped (La,Y)2Si2O7 single crystal by micro-pulling-down method. The observed thermal quenching process could be characterized by the quenching temperature (T50%) of 526 K and its activation energy was determined to be 0.62 eV. It was found that the thermal quenching was caused by at least the thermal ionization and maybe also by classical thermal quenching. The light output and scintillation decay time were evaluated to be ~12,000 photons/MeV and ~42 ns, respectively.
Trvalý link: http://hdl.handle.net/11104/0321949