Pulsed laser deposited transparent and conductive V-doped ZnO thin films

0543680 - FZÚ 2022 RIV CH eng J - Článek v odborném periodiku
Smaali, A. - Abdelli-Messaci, S. - Lafane, S. - Mavlonov, A. - Lenzner, J. - Richter, Steffen - Kechouane, M. - Nemraoui, O. - Ellmer, K.
Pulsed laser deposited transparent and conductive V-doped ZnO thin films.
Thin Solid Films. Roč. 700, Apr (2020), č. článku 137892. ISSN 0040-6090. E-ISSN 1879-2731
Institucionální podpora: RVO:68378271
Klíčová slova: vanadium-doped zinc oxide * thin films * pulsed laser deposition * transparent conducting oxides * electrical properties * optical properties
Obor OECD: Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)
Impakt faktor: 2.183, rok: 2020
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.tsf.2020.137892

ZnO and vanadium-doped ZnO (0.7-4.1 at.%) thin films were deposited onto corning glass substrates by the pulsed laser deposition technique using a KrF excimer laser (lambda = 248 nm). The films were deposited at 500 degrees C under an oxygen pressure of 1 Pa with a laser fluence of 2 J/cm(2). The structural, morphological, optical and electrical properties as a function of the dopant atomic concentration were investigated by means of X-ray diffraction, Scanning Electron Microscopy, spectrophotometry, conductivity and Hall measurements. All the doped and undoped films show a preferential orientation along the c-axis with a deterioration at higher doping levels (>4 at. %). Besides, as the doping amount increases the in-plane stress leads to an increase of the c-axis lattice parameter. The films are transparent within the wavelength range 400-1200 nm.
Trvalý link: http://hdl.handle.net/11104/0320866