Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs

0543277 - ÚFE 2022 RIV CH eng J - Článek v odborném periodiku
Reszka, A. - Korona, P.K. - Tiagulskyi, Stanislav - Turski, H. - Jahn, U. - Kret, S. - Bozek, R. - Sobanska, M. - Zytkiewicz, Z. R. - Kowalski, B. J.
Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs.
Electronics. Roč. 10, č. 1 (2021), č. článku 45. E-ISSN 2079-9292
Institucionální podpora: RVO:67985882
Klíčová slova: nanowires * GaN * growth polarity * AlGaN
Obor OECD: Electrical and electronic engineering
Impakt faktor: 2.690, rok: 2021
Způsob publikování: Open access
https://doi.org/10.3390/electronics10010045

For the development and application of GaN-based nanowire structures, it is crucial to understand their fundamental properties. In this work, we provide the nano-scale correlation of the morphological, electrical, and optical properties of GaN/AlGaN nanowire light emitting diodes (LEDs), observed using a combination of spatially and spectrally resolved cathodoluminescence spectroscopy and imaging, electron beam-induced current microscopy, the nano-probe technique, and scanning electron microscopy. To complement the results, the photo- and electro-luminescence were also studied. The interpretation of the experimental data was supported by the results of numerical simulations of the electronic band structure. We characterized two types of nanowire LEDs grown in one process, which exhibit top facets of different shapes and, as we proved, have opposite growth polarities. We show that switching the polarity of nanowires (NWs) from the N- to Ga-face has a significant impact on their optical and electrical properties. In particular, cathodoluminescence studies revealed quantum wells emissions at about 3.5 eV, which were much brighter in Ga-polar NWs than in N-polar NWs. Moreover, the electron beam-induced current mapping proved that the p-n junctions were not active in N-polar NWs. Our results clearly indicate that intentional polarity inversion between the n- and p-type parts of NWs is a potential path towards the development of efficient nanoLED NW structures
Trvalý link: http://hdl.handle.net/11104/0320510