Reversible laser-assisted structural modification of the surface of As-rich nanolayers for active photonics media

0542789 - FZÚ 2022 RIV NL eng J - Článek v odborném periodiku
Kondrat, O. - Holomb, R. - Mitsa, A. - Veres, M. - Csik, A. - Takats, V. - Duchoň, T. - Veltruská, K. - Vondráček, Martin - Tsud, N. - Mitsa, V. - Matolín, V. - Prince, K. C.
Reversible laser-assisted structural modification of the surface of As-rich nanolayers for active photonics media.
Applied Surface Science. Roč. 518, July (2020), č. článku 146240. ISSN 0169-4332. E-ISSN 1873-5584
Institucionální podpora: RVO:68378271
Klíčová slova: As-Se nanolayers * synchrotron radiation photoelectron spectroscopy * photoinduced changes * reversibility * Valence band
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 6.707, rok: 2020
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.apsusc.2020.146240

Reversible structural changes of As-rich As–Se nanolayers occurring during in situ thermal annealing and above-bandgap laser illumination were studied by synchrotron radiation photoelectron spectroscopy. It was found that the first thermal annealing of As56Se44 nanolayers led to a decrease of the concentration of As that can be connected with evaporation of more volatile As-rich fractions from the surface. This process is accompanied by structural rearrangements in the nanolayers. In situ green laser illumination of annealed samples causes an increase in the concentration of homopolar As–As bonds associated with As-Se2As s, while the opposite effect was detected during further thermal treatment.
Trvalý link: http://hdl.handle.net/11104/0320136