Trap-state-induced Becquerel type of photoluminescence decay in DPA-activated silicon nanocrystals

0541771 - FZÚ 2022 RIV US eng J - Článek v odborném periodiku
Kůsová, Kateřina - Popelář, Tomáš - Pelant, Ivan - Morselli, G. - Angeloni, S. - Ceroni, P.
Trap-state-induced Becquerel type of photoluminescence decay in DPA-activated silicon nanocrystals.
Journal of Physical Chemistry C. Roč. 125, č. 3 (2021), s. 2055-2063. ISSN 1932-7447. E-ISSN 1932-7455
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR(CZ) GA18-05552S
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: surface modification * silicon nanocrystal * photoluminescence decay
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 4.177, rok: 2021
Způsob publikování: Omezený přístup
https://doi.org/10.1021/acs.jpcc.0c09072

The emission-wavelength-resolved photoluminescence decay of silicon nanocrystals activated with diphenylantracene molecules can be well-described by the Becquerel (compressed hyperbola) function, featuring a characteristic power-law-like tail. This shape of the photoluminescence decay function is linked to a model based on trapping and releasing of excited carriers, which are the cause of the longer tail. Our model allows us to estimate the value of the trap capture cross-section approximately 1.5 x 10−16 cm2.
Trvalý link: http://hdl.handle.net/11104/0319297