Počet záznamů: 1
Nanostructured layer enhancing light extraction from GaN-based scintillator using MOVPE
- 1.0541758 - FZÚ 2022 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Vaněk, Tomáš - Hubáček, Tomáš - Hájek, František - Dominec, Filip - Pangrác, Jiří - Kuldová, Karla - Oswald, Jiří - Hospodková, Alice
Nanostructured layer enhancing light extraction from GaN-based scintillator using MOVPE.
Proceedings of the 12th International Conference on Nanomaterials - Research & Application. Ostrava: Tanger Ltd., 2021, s. 12-17. ISBN 978-80-87294-98-7. ISSN 2694-930X.
[International Conference NANOCON 2020 /12./. Brno (CZ), 21.10.2020-23.10.2020]
Grant CEP: GA MŠMT(CZ) LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * GaN * light extraction * SiNx * scintillator
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Light extraction (LE) efficiency of GaN buffer layer was studied by angle-resolved photoluminescence. We measured enhancement of light extraction efficiency (LEE) up to 154% by introducing the SiNx layer atop the GaN buffer and subsequent GaN light extraction layer (LEL) overgrowth. Morphological properties of GaN.
Trvalý link: http://hdl.handle.net/11104/0319288
Počet záznamů: 1