Počet záznamů: 1  

Non-thermal pulsed plasma activated water: environmentally friendly way for efficient surface modification of semiconductor nanoparticles

  1. 1.
    0541741 - FZÚ 2022 RIV GB eng J - Článek v odborném periodiku
    Galář, Pavel - Khun, J. - Fučíková, A. - Dohnalová, K. - Popelář, Tomáš - Matulková, I. - Valenta, J. - Scholtz, V. - Kůsová, Kateřina
    Non-thermal pulsed plasma activated water: environmentally friendly way for efficient surface modification of semiconductor nanoparticles.
    Green Chemistry. Roč. 23, č. 2 (2021), s. 898-911. ISSN 1463-9262. E-ISSN 1463-9270
    Grant CEP: GA ČR(CZ) GA18-05552S; GA MŠMT(CZ) EF16_019/0000760
    Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
    Institucionální podpora: RVO:68378271
    Klíčová slova: non thermal plasma * silicon nanocrystals * plasma activated water * surface termination
    Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
    Impakt faktor: 11.034, rok: 2021
    Způsob publikování: Omezený přístup
    https://doi.org/10.1039/d0gc02619k

    We present an environmentally friendly method of their surface modification. Water treated by discharge is known to produce the so-called plasma activated water, containing a complex mixture of water- and air-originating reactive species. We show that after the treatment of silicon nanoparticles with our plasma activated water, their photoluminescence quantum yield increases several times and their dispersibility in water is significantly improved. We demonstrate that the modification is caused by surface incorporation of nitrate-water complexes, which subsequently leads to a change of surface-oxide-related strain affecting the charge carrier radiative rates. The general applicability of the method is confirmed using commercial MgO and ZnO nanoparticles. Thus, the proposed method enables chemicals-free surface modification of nanoparticles and opens the door for a wide range of variations based on different liquids and discharge parameters.
    Trvalý link: http://hdl.handle.net/11104/0319272

     
     
Počet záznamů: 1  

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