Photoluminescence in wide band gap nanocrystals

0540846 - FZÚ 2021 RIV CZ eng A - Abstrakt
Dragounová, Kateřina - Ižák, Tibor - Potocký, Štěpán - Potůček, Zdeněk - Bryknar, Z. - Kromka, Alexander - Remeš, Zdeněk
Photoluminescence in wide band gap nanocrystals.
Proceedings of Abstracts. Ostrava: Tanger Ltd., 2018 - (Shrbená, J.). s. 67-67. ISBN 978-80-87294-85-7.
[NANOCON 2018 -International Conference on Nanomaterials - Research and Application /10./. 17.10.2018-19.10.2018, Brno]
Grant CEP: GA ČR GC16-10429J
Institucionální podpora: RVO:68378271
Klíčová slova: pholuminescence * diamond
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

The diamond films were grown by microwave plasma enhanced CVD system. Temperature dependent steady-state photoluminescence (PL) of Si-V centres was measured within the range 11-300 K. PL measurements are correlated with process parameters. It was found that quartz or Si as substrates and substrate temperature of 800°C were the optimal parameters, at which the highest photoluminescence activity of Si-V centre was measured. For all the samples, the temperature dependent PL measurements exhibited the blue shift in zero-phonon line (ZPL) position for lower temperatures and for selected samples, ZPL narrowing were observed. This effect will be discussed from point of temperature behaviour of Si-V electronic transition energy. Temperature development of PL integral intensity was discussed by means of Boltzmann activation process. It suggests the contribution of other centres in luminescence process.

Trvalý link: http://hdl.handle.net/11104/0318435