Direct deposition of CVD diamond layers on the top of GaN membranes

0540753 - FZÚ 2021 RIV CH eng C - Konferenční příspěvek (zahraniční konf.)
Izsák, Tibor - Vanko, G. - Držík, M. - Kasemann, S. - Zehetner, J. - Vojs, M. - Zaťko, B. - Potocký, Štěpán - Kromka, Alexander
Direct deposition of CVD diamond layers on the top of GaN membranes.
Proceedings of 4th International Conference nanoFIS 2020 - Functional Integrated nanoSystems. Basel: MDPI, 2020 - (Köck, A.; Deluca, M.), s. 1-3, č. článku 35. E-ISSN 2504-3900.
[International Conference on Functional Integrated nano Systems (nanoFIS 2020) /4./. Online (AT), 02.11.2020-04.11.2020]
Grant CEP: GA MŠMT LM2018110; GA MŠMT(CZ) 8X20035; GA MŠMT(CZ) EF16_019/0000760
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: diamond * GaN * CVD * stress
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

We present technological issues in the deposition of diamond films on the GaN membranes. Many wrinkles and thicker diamond layer were observed at the membrane centre and poor quality diamond outside the membrane area. The deflection of the membranes were analyzed by a bulging method using white light interferometry. The membrane bending was discussed in the terms of temperature gradient and mismatch of thermal expansion coefficients of materials.
Trvalý link: http://hdl.handle.net/11104/0318358